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    • Highly Reliable and Self-designed D2PAK (TO-263) SiC Diode

    Highly Reliable and Self-designed D2PAK (TO-263) SiC Diode Featured Image
    • Highly Reliable and Self-designed D2PAK (TO-263) SiC Diode

    Short Description:

    Packaging Structure: D2PAK (TO-263)

    Introduction: YUNYI D2PAK (TO-263) SiC Diode, which is made from silicon carbide materials, has high thermal conductivity, which can effectively improve power density. The high breakdown field strength of SiC diodes increases the withstand voltage and reduces the size, and the high electronic breakdown field strength increases the breakdown voltage of semiconductor power devices. At the same time, due to the increase of the electron breakdown field strength, in the case of increasing the impurity penetration density, the broadband of the drift region of the SiC diode power device can be reduced, so that the size of the power device can be reduced.


    Product Detail

    Monitoring response time

    Measuring range

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    Advantages of YUNYI's D2PAK (TO-263) SiC Diode:

    1. Low inductance

    2. Competitive cost with high-level quality.

    3. High production efficiency with short lead time.

    4. Small size, helping to optimize the circuit board space

    整理 (7)-2

    Steps of Chip Production:

    1. Mechanically Printing（Super-precise automatic wafer printing）

    2. Automatic First-etching （Automatic Etching Equipment，CPK>1.67）

    3. Automatic Polarity Test（Precise Polarity Test）

    4. Automatic Assembly （Self-developed Automatic Precise Assembly）

    5. Soldering (Protection with Mixture of Nitrogen & Hydrogen Vacuum Soldering )

    6. Automatic Second-etching (Automatic Second-etching with Ultra-pure Water)

    7. Automatic Gluing (Uniform Gluing & Precise Calculation are Realized by Automatic Precise Gluing Equipment)

    8. Automatic Thermal Test (Automatic Selection by Thermal Tester)

    9. Automatic Test(Multifunctional Tester)

    晶圆
    芯片组装

    Parameters of products:

    Part Number Package VRWM
    V    		 IO
    A    		 IFZM 
    A    		 IR
    μa    		 VF
    V
    ZICRB5650 D2PAK 650 5 60 60 2
    ZICRB6650 D2PAK 650 6 60 50 2
    Z3D06065G D2PAK 650 6 70 3(0.03 typical) 1.7(1.5 typical)
    ZICRB10650CT D2PAK 650 10 60 60 1.7
    ZICRB10650 D2PAK 650 10 110 100 1.7
    Z3D10065G D2PAK 650 10 115 40(0.7 typical) 1.7(1.45 typical)
    ZICRB20650A D2PAK 650 20 70 100 1.7
    ZICRB101200 D2PAK 1200 10 110 100 1.8
    ZICRB12600 D2PAK 600 12 50 150 1.7
    ZICRB12650 D2PAK 650 12 50 150 1.7
    Z3D30065G D2PAK 650 30 255 140(4 typical) 1.7(1.4 typical)
    Z4D05120G D2PAK 1200 5 19 200(20 typical) 1.8(1.65 typical)
    Z4D20120G D2PAK 1200 20 162 200(35 typical) 1.8(1.5 typical)
    Z3D20065G D2PAK 650 20 170 50(1.5 typical) 1.7(1.45 typical)
    Z3D06065L DFN8×8 650.0 6.0 70.0 3(0.03 typical) 1.7(1.5 typical)

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