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Great Efficiency and Durability 3L TO-220AB SiC Diode

Short Description:

Packaging Structure: 3L TO-220AB

Introduction: YUNYI 3L TO-220AB SiC Diode is made from silicon carbide materials. SiC diodes have high thermal conductivity, which can effectively improve power density. The higher the thermal conductivity, the stronger the ability of the material to transfer heat to the environment, the smaller the temperature rise of the device, the more conducive to improving the power density of the power device, so it is more suitable for working in a high temperature environment. The high breakdown field strength of SiC diodes increases the withstand voltage and reduces the size, and the high electronic breakdown field strength increases the breakdown voltage of semiconductor power devices. At the same time, due to the increase of the electron breakdown field strength, in the case of increasing the impurity penetration density, the broadband of the drift region of the SiC diode power device can be reduced, so that the size of the power device can be reduced.


Product Detail

Monitoring response time

Measuring range

Product Tags

Advantages of YUNYI's 3L TO-220AB SiC Diode:

1. Competitive cost with high-level quality

2. High production efficiency with short lead time

3. Small size, helping to optimize the circuit board space

4. Endurable under various natural environments

5. Self-developed low-loss chip

3L TO-220AB

Steps of Chip Production:

1. Mechanically Printing(Super-precise automatic wafer printing)

2. Automatic First-etching (Automatic Etching Equipment,CPK>1.67)

3. Automatic Polarity Test(Precise Polarity Test)

4. Automatic Assembly (Self-developed Automatic Precise Assembly)

5. Soldering (Protection with Mixture of Nitrogen & Hydrogen Vacuum Soldering )

6. Automatic Second-etching (Automatic Second-etching with Ultra-pure Water)

7. Automatic Gluing (Uniform Gluing & Precise Calculation are Realized by Automatic Precise Gluing Equipment)

8. Automatic Thermal Test (Automatic Selection by Thermal Tester)

9. Automatic Test(Multifunctional Tester)

贴片检测
芯片组装

Parameters of products:

Part Number Package VRWM
V
IO
A
IFZM 
A
IR
μa
VF
V
ZICRF10650CT ITO-220AB 650 10 60 60 1.7
ZICRF5650 ITO-220AC 650 5 60 60 2
ZICRF6650 ITO-220AC 650 6 60 50 2
Z3D06065F ITO-220AC 650 6 70 3(0.03 typical) 1.7(1.5 typical)
ZICRF10650 ITO-220AC 650 10 100 120 1.7
ZICRF101200 ITO-220AC 1200 10 110 100 1.8
ZICRF12600 ITO-220AC 600 12 50 150 1.7
ZICRF12650 ITO-220AC 650 12 50 150 1.7
Z3D03065F ITO-220AC 650 3 46 2(0.03 typical) 1.7(1.4 typical)
Z3D10065F ITO-220AC 650 10 115 40(0.7 typical) 1.7(1.45 typical)
Z4D10120F ITO-220AC 1200 10 105 200(30 typical) 1.8(1.5 typical)
ZICR10650CT TO-220AB 650 10 60 60 1.7
Z3D20065C TO-220AB 650 20 115(per leg) 40(0.7 typical)(per leg) 1.7(1.45 typical)(per leg)
ZICR5650 TO-220AC 650 5 60 60 2
ZICR6650 TO-220AC 650 6 60 50 2
Z3D06065A TO-220AC 650 6 70 3(0.03 typical) 1.7(1.5 typical)
Z3D10065A TO-220AC 650 10 115 40(0.7 typical) 1.7(1.45 typical)
ZICR10650 TO-220AC 650 10 110 100 1.7
Z3D20065A TO-220AC 650 20 170 50(1.5 typical) 1.7(1.45 typical)
ZICR101200 TO-220AC 1200 10 110 100 1.8
ZICR12600 TO-220AC 600 12 50 150 1.7
ZICR12650 TO-220AC 650 12 50 150 1.7
Z3D03065A TO-220AC 650 3 46 2(0.03 typical) 1.7(1.4 typical)
Z4D04120A TO-220AC 1200 4 46 200(20 typical) 1.8(1.5 typical)
Z4D05120A TO-220AC 1200 5 46 200(20 typical) 1.8(1.65 typical)
Z4D02120A TO-220AC 1200 2 44 50(10 typical) 1.8(1.5 typical)
Z4D10120A TO-220AC 1200 10 105 200(30 typical) 1.8(1.5 typical)
Z4D20120A TO-220AC 1200 20 162 200(35 typical) 1.8(1.5 typical)
Z4D08120A TO-220AC 1200 8 64 200(35 typical) 1.8(1.6 typical)
Z4D15120A TO-220AC 1200 15 100 200(35 typical) 1.8(1.5 typical)
Z3D15065A TO-220AC 650 15 162 25(0.5 typical) 1.7(1.5 typical)
Z3D06065I TO-220-IZolation 650 6 70 3(0.03 typical) 1.7(1.5 typical)
Z3D10065I TO-220-IZolation 650 10 115 40(0.7 typical) 1.7(1.45 typical)

 


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